ChalcogenideChalcogenide and Heusler ternary alloyHeusler ternary alloy-basedHeusler ternary alloy-based systems systemsThermoelectricity suchTernary-alloy system as; Ag–Sb–Te (AST)Ag-Sb-Te (AST), Ge–Sb–Te (GST)Ge-Sb-Te (GST), Bi–Sb–Te (BST)Bi-Sb-Te (BST) and Fe–Ti–Sb (FTS)Fe-Ti-Sb (FTS) thinTernary alloys filmsThin films are thermoelectric materialsThermoelectric material as reported in the recent year. Based on this, researchers are interested in the profound uses of these materials inNonvolatile phase-change memory devices nonvolatile phasePhase-change memory devices, due to their very lowThermal properties thermal conductivityThermal conductivity. This chapter reviews and compares the microstructureMicrostructure, compositionComposition, electricalElectrical and thermoelectric propertiesThermoelectric properties, and thermoelectric generationThermoelectric generation of four compoundsCompound. It is found that the GST thin filmThin films system enhances the power factorPower factor with the addition of Ag onto SiO2-0.1 µm/Si-wafer substrateSi-wafer substrate usingCo-magnetron sputtering a co-magnetron sputteringMagnetron sputtering process. The power factorPower factor of GST thin filmThin films had improved by almost one order of magnitude (around 5.83 mW m–1 K–2) within the Ag adding of 13.75% due to obtaining a high Seebeck coefficientSeebeck coefficient (760 μVK–1) and lowest electrical resistivityElectrical resistivity (9.80 mΩ cm). While the AST thin filmsThin films, the effect of temperatureTemperature annealingAnnealing of as-deposited AST thin filmsThin films onto aSoda-lime glass soda-lime glassGlass substrateSoda-lime glass substrate could be enhanced the power factorPower factor as deposited on theLow-cost low-costCost substrate around 0.485 mW m–1 K–2, after annealingAnnealing at 400 °C (673 K). Including, the crystal structureCrystal structure of the BST thin filmsThin films on SiO2/Si-wafer substratesSi-wafer substrate showed a preferred orientation along the c-axis (00l) that is induced through the rapid thermal annealingRapid thermal annealing process. After annealed thin filmsThin films, the highest power factorPower factor was 4.46 mW m–1 K–2 at 373 K for Bi0.9Sb0.1Te thin filmThin films. Finally, FTS thin filmsThin films were synthesized onto SiO2 0.1-µm/Si-wafer using a DC magnetron sputteringDC magnetron sputtering process. It was found that the crystal structureCrystal structure and morphologyMorphology displayed the amorphousAmorphous structureStructure and the compositionComposition confirmed of Fe5TiSb3 compoundCompound. The Seebeck coefficientSeebeck coefficient value indicated that the FTS thin filmsThin films showed both p and n typesN type of thermoelectricThermoelectric .

Thermoelectricity of Ternary Alloy-Based Thin Films Fabricated by Magnetron Sputtering Method

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发表日期：

2025年

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Athorn Vora-ud,
Tosawat Seetawan

摘要

ChalcogenideChalcogenide and Heusler ternary alloyHeusler ternary alloy-basedHeusler ternary alloy-based systems systemsThermoelectricity suchTernary-alloy system as; Ag–Sb–Te (AST)Ag-Sb-Te (AST), Ge–Sb–Te (GST)Ge-Sb-Te (GST), Bi–Sb–Te (BST)Bi-Sb-Te (BST) and Fe–Ti–Sb (FTS)Fe-Ti-Sb (FTS) thinTernary alloys filmsThin films are thermoelectric materialsThermoelectric material as reported in the recent year. Based on this, researchers are interested in the profound uses of these materials inNonvolatile phase-change memory devices nonvolatile phasePhase-change memory devices, due to their very lowThermal properties thermal conductivityThermal conductivity. This chapter reviews and compares the microstructureMicrostructure, compositionComposition, electricalElectrical and thermoelectric propertiesThermoelectric properties, and thermoelectric generationThermoelectric generation of four compoundsCompound. It is found that the GST thin filmThin films system enhances the power factorPower factor with the addition of Ag onto SiO2-0.1 µm/Si-wafer substrateSi-wafer substrate usingCo-magnetron sputtering a co-magnetron sputteringMagnetron sputtering process. The power factorPower factor of GST thin filmThin films had improved by almost one order of magnitude (around 5.83 mW m–1 K–2) within the Ag adding of 13.75% due to obtaining a high Seebeck coefficientSeebeck coefficient (760 μVK–1) and lowest electrical resistivityElectrical resistivity (9.80 mΩ cm). While the AST thin filmsThin films, the effect of temperatureTemperature annealingAnnealing of as-deposited AST thin filmsThin films onto aSoda-lime glass soda-lime glassGlass substrateSoda-lime glass substrate could be enhanced the power factorPower factor as deposited on theLow-cost low-costCost substrate around 0.485 mW m–1 K–2, after annealingAnnealing at 400 °C (673 K). Including, the crystal structureCrystal structure of the BST thin filmsThin films on SiO2/Si-wafer substratesSi-wafer substrate showed a preferred orientation along the c-axis (00l) that is induced through the rapid thermal annealingRapid thermal annealing process. After annealed thin filmsThin films, the highest power factorPower factor was 4.46 mW m–1 K–2 at 373 K for Bi0.9Sb0.1Te thin filmThin films. Finally, FTS thin filmsThin films were synthesized onto SiO2 0.1-µm/Si-wafer using a DC magnetron sputteringDC magnetron sputtering process. It was found that the crystal structureCrystal structure and morphologyMorphology displayed the amorphousAmorphous structureStructure and the compositionComposition confirmed of Fe5TiSb3 compoundCompound. The Seebeck coefficientSeebeck coefficient value indicated that the FTS thin filmsThin films showed both p and n typesN type of thermoelectricThermoelectric .