Analysis of Process Variation Within Clock Regions of AMD-Xilinx UltraScale+ Devices

As semiconductor technology advances and transistor feature sizes shrink, the increasing significance of process variation poses critical challenges to the reliability of semiconductor devices. This paper thoroughly explores the impact of process variation within the Clock Regions (CRs) of AMD-Xilinx UltraScale+ devices. We employ a novel method to characterize process variation with significantly higher precision than conventional ring oscillator (RO)-based sensors. Our experimental findings on ZYNQ XCZU9EG reveal that the latency of resources during rising and falling transitions may differ. Additionally, the proximity of Interconnect (INT) tiles to various tile types can influence the latency of resources within a column in a given CR. Moreover, we demonstrate that specific segments within CRs consistently exhibit faster performance compared to other areas within the same CR.