Study of p-n Junctions Created by Laser Implantation of In in Semi-Insulating p-CdTe:Cl

The paper analyzes the measurements results of the electrical and photoelectric properties of the barrier structures created by laser implantation of In into the surface region of high-resistivity detector-grade p-CdTe:Cl crystals. The I-V characteristics and spectral photosensitivity measured in the photovoltaic mode of the formed structures are discussed. The conversion of the conductivity type of a thin surface layer in p-CdTe:Cl and formation of a shallow steep p-n junction at the p-CdTe:Cl/n-CdTe:In interface was approved. Etching of the CdTe:In surface region led to the disappearance of the photovoltaic effect in the barrier structures. The fabricated p-n junction diodes with high photosensitivity and low reverse dark current are promising as X/γ-ray sensors.