Photosensitivity of ZnOx:MgOx Nanocomposite Sol-Gel Films on the Surface of Silicon Depending on Temperature
摘要
The photoelectric characteristics of sol-gel ZnOx:MgOx layers on an n-Si substrate, measured in the temperature range from 5 to 50 °C, has been analyzed. For photodetector applications, the current must flow across the ZnOx:MgOx/n-Si/InGa structure and it should operate in pre-avalanche or avalanche mode (U of the order of −20 V). A strong effect of temperature on the photoelectric characteristics has been established, associated with the inclusion in the current transfer of various local energy levels due to electrically active impurities and defects at the interface of the structure.