Dielectric SiO2 Sol-Gel Coatings for Microelectronics

Research has been conducted to investigate the selection of initial organic silicon compounds and the conditions for the formation of sol-gel coatings to achieve surface planarization. Experiments were conducted to determine the optimal modes of depositing the film-forming solution through spin-coating and the modes of heat treating the resulting coatings. The roughness and planarization of sol-gel coatings deposited on the integrated circuit surface with aluminum tracks were investigated using profilometry and scanning microscopy methods. The studies analyzed the thickness and homogeneity of the structure of the resulting materials using a scanning electron microscope. The capacitance-voltage and current-voltage dependences have been established. The dielectric constant, the value of the voltage shift of the flat zones, and the capacitance of the flat zones have been calculated.