A DC-50 GHz SPDT Switch for 5G Wireless Applications
摘要
A broadband high-isolation single pole double throw (SPDT) switch based on a 0.15 μm gate length indium gallium arsenide (InGaAs) pseudomorphic high electron transistor (pHEMT) is reported. The SPDT switch is composed of four shunt-stacked FET units on each branch with two FETs in series for increased voltage handling capability. The switch is designed to operate at the frequency range of DC-50 GHz with less than 3 dB insertion loss and more than 40 dB isolation, for X-band and K/Ka band frequency applications.