Preparation, Phase Composition, Nanostructure, Dielectric and Ferroelectric Characteristics of Sr0.6Ba0.4Nb2O6 Thin Films Grown on a Silicon Substrate in an Oxygen Atmosphere

The barium strontium niobate Sr0.6Ba0.4Nb2O6 thin film was grown by the RF cathode sputtering technique in an oxygen atmosphere on a p-type Si(001) semiconductor substrate. According to X-ray diffraction studies, it was established that the barium-strontium niobate film was c-oriented textured, and there were practically no unit cell strains in them. The film surface has a uniform granular relief, does not contain cavities or cracks, and the root-mean-square roughness in a typical area is ~ 17.6 nm. It has been found that polarization in the SBN-60 film has predominantly an out-of-plane direction and the film was spontaneously polarized after synthesis. It is shown that the value of the relative dielectric constant, calculated from the C(U) dependence of the heterostructure, measured at a fixed temperature, is 500–832 in (−190… + 200)°C temperature range, and at low temperatures dielectric constant exceeds those for the corresponding single crystal. The reasons for the identified regularities and features of the manifestation of memory effects are discussed.