Design and Optimization of a Sub-threshold CMOS LDO Regulator with Improved Performance for IoT and Wearable Devices

This chapter proposes a novel approach to design a low-power LDO regulator for RF SoCs by utilizing CMOS sub-threshold technology with improved transient response and load regulation. The study investigates the use of weak inversion region amplifiers in LDO regulators for portable and wearable devices and presents a nanopower LDO regulator circuit designed using 90 nm TSMC-CMOS technology. The regulator is capable of regulating the output with a ground current of 1.12  \(\mu \) A at 50 mA load current while consuming a total power of 900 nW for the amplifier and the right-hand drive branch circuit. The simulation results show a significant decrease in energy consumption compared to existing works, making it suitable for various RF SoC applications.