A Model of Particle Growth in Film Deposition

The understanding and simulation of the nucleation of particles in thin substrates is of importance in many areas of technologyTechnology. The deposition of dispersed particles requires the tuning of parameters to avoid agglomeration. Nucleation can be modeled with spherical or cylindrical morphologies. Parameters include heat transferHeat transfer coefficients and the “under cooling”. A stable transient moving interface for radial growth is found using WOLFRAM. A quasi-steady-state solution results where the growth is stabilized. This state is important in the formation of various structuresStructure like in-situIn-situ growth for thin filmThin films devices and protective coatingsCoating. Preliminary simulations on some alloy systems indicate that phase segregationSegregation and nucleation are predictable from transient time-dependent equations like energy balance in MBPs. This is separate from using the Gibbs free energy curves used in steady-state CALPHADCALPHAD type simulations. A discussion of the overlap with the Cahn–Hilliard equation is included.