Single Electron Tunneling Based Threshold Logic Unit

In the present era, electronic goods should be of high operating speed, high fan-out, minimum cost, least power consumption, and maximal component density of integration. These attributes are essentially required in technology, business, engineering, science and manufacturing. All those attributes can be fulfilled by using the circuits based on the tunneling of electron(s) through Single Electron Transistors (SETs) and Logic Gates following the Threshold logic. A Threshold logic gate (TLG) with multiple inputs is represented. With the help of it inverter, logic AND, OR, XOR, 4 \(\times \) 1 Mux and their respective threshold logic gates are also depicted. And finally a Threshold Logic Unit (TLU) is drawn with some of its simulated inputs/outputs. How much power consumed by a logic gate/circuit, how much time it takes to execute (i.e. latency), and how many components required for constructing a circuit are provided in the chapter 13. An electron bears the charge adequate to keep an information in a Single Electron tunneling based device (SED). Energy needed for execution of an operation in the SED based circuits is very low when compared with CMOS-based circuits. TLG would be a best and fine candidate that satisfies the requirements needed to implement a more complex circuit. When an extremely low noise device is essential, TLG must be an extreme entity for the implementation of logic devices/modules. The fastness of the TLG-based circuit is very close to an electronic speed as an electron tunnels through the system with speed of an electron in metal. Delay versus capacitance and delay versus error probability are graphically depicted. The operating/switching speeds for the device(s)/module(s), their fan-out etc. are also cited in the related sections.