A Novel Approach Based on Symmetry

This chapter introduces a concise I–V method for extracting key parameters of metal-semiconductor diodes, such as series resistance, ideality factor, barrier height, and built-in potential. It achieves this by reformulating the TE equation into an ordinary differential equation, revealing an unexpected symmetry that eliminates the series resistance term. Although the method’s derivation may appear complex, its practical application is straightforward. The results obtained using this method align strongly with established trends in the literature compared to other electrical methods. Notably, series resistance calculations from this method exhibit rare agreement with the C–V method compared to the Cheung-Cheung method, accurately reproducing additional parameters like photo-conductive response and interface state density.