New Parameter Extraction Techniques

A simplified graphical method, termed the current-voltage-temperature (I-V-T) method, is proposed for extracting static parameters of Schottky diodes. This method extends the conventional current-voltage approach by incorporating temperature considerations. Initially, voltage-temperature characteristics are derived at two constant currents. Then, points at the same bias or temperature under specified current densities are used to extract the parameters of interest. This mathematical abstraction significantly streamlines the determination of ideality factor, barrier height, and diode resistance. The analysis starts by assuming an ideal diode with zero current modulation due to a base resistance, followed by quantifying the effect of a non-zero base resistance. The analysis includes simulations on the commercial BAT54 Schottky diode and on Au/n-Ge, Au/n-Si, and Au/n-GaAs Schottky diodes in the literature. The IVT method yields lower variances over wider bias in calculated barrier height, ideality factor, and forward resistance compared to the published values, suggesting that the I-V-T method is a feasible alternative for characterizing these diodes. This is primarily due to the ability to control current density in the TE equation.