Key-Components for Ultra-low DC Power Gallium Nitride Low-Noise Receivers

The availability of low-noise and low-voltage Gallium Nitride technologies enables new microwave receivers concepts for satellite payloads. In this note we present the potentials, benefits and drawbacks of a Low-Noise Amplifier at Ka-band operating at rather low drain voltages in a 100-nm gate length technology. Possible receiver improvements thanks to robust Gallium Nitride Low-Noise Amplifiers are highlighted. A complete R &D flow from device modelling, through circuit design to MMIC characterization is presented, focusing on low drain voltage operation. Interesting linear and noise measured performance of a Ka-band Low-Noise Amplifier are given, showing that GaN Low-Noise Amplifiers can be operated as low as +2 V drain voltage, while maintaining reasonable nonlinear performance.