Validation of Thermometer-Based Techniques to Experimentally Extract the Impact of Nonlinear Thermal Effects on the Thermal Resistance of Bipolar Transistors
摘要
In this paper, two techniques developed to experimentally extract the influence of nonlinear thermal effects on the thermal resistance of bipolar transistors are tested. The validation is performed by applying the techniques to data obtained from DC electrothermal simulations of a transistor modeled with HICUM/L2, where an accurate formulation of the thermal resistance accounting for nonlinear thermal effects is implemented.