Design of a GaAs-FET Based Low Noise Amplifier for Sub-6 GHz 5G Applications

In this paper, we present a comprehensive analysis of the design process behind a class A low noise amplifier (LNA), meticulously crafted to cater to the demands of sub-6GHz fifth-generation wireless (5G) applications. The core of this amplifier’s architecture incorporates a gallium arsenide field-effect transistor (GaAs-FET s8834), operating seamlessly at the frequency of 3.5 GHz, within the encompassing environment of the Advanced Design System (ADS) software. Which characterized by the drain current Vds = 4 V, the gate voltage Vgs = −1.42 V and drain current Id = 88 mA. With frequency band from 1 GHz to 7 GHz to get a maximum gain of 15.436 dB with low noise figure NF = 1.908 dB. Furthermore, the PAE level we have achieved, approximately 28.417%, remains extremely valuable for real-world applications of sub-6GHz 5G networks. Its energy efficiency contributes to prolonging the battery life of wireless devices and reducing overall network power consumption. These performance metrics are critical for sub-6GHz 5G networks, where signal quality and efficiency are paramount. Our work stands out due to its precision-driven methodology, strategically positioning the LNA as an indispensable catalyst for enhancing front-end efficiency and, consequently, the overall system performance in the realm of 5G networks. By addressing the specific challenges posed by sub-6GHz frequencies, our contribution significantly advances the state-of-the-art in LNA design for 5G applications.