Growth of Diamond on High-Power Electronic Material

Wide band gap (WBG) semiconductors play an enormous role in high-powerHigh power electronics application. With ever increasing demand for miniaturisationMiniaturisation, efficiency enhancementEfficiency enhancement, low operational cost etc., thermal managementThermal management in high-power devices is a major challenge. Diamond, known for its exceptional thermal conductivityThermal conductivity, is emerging as a highly promising material for effective thermal managementThermal management. In this chapter direct diamond growth on WBG material like GaNGaN, AlNAlN and \(\beta \) –Ga \(_2\) O \(_3\) will be discussed. The surfaces of the WBG will be examined to determine surface chargeSurface charge as inferred by zeta potential measurements. Subsequently, the effect of zeta potential on diamond growth will also be discussed. Finally the diamond layers grown on the WBGWBG will be examined and its properties discussed in detail. The chapter will be concluded with a discussion on major drawbacks of direct diamond growth for thermal managementThermal management on WBG semiconductor along with the way forward in this context.