In-Situ Fabrication of Poly (m-Phenylene Isophthalamide)/Fluorographene Nanocomposites and Their Properties

Nowadays, dielectric materials with excellent mechanical and thermal properties are desired for use in integrated circuits (ICs). For this reason, low dielectric constant Poly (m-phenylene isophthalamide)/fluorographene (PMIA/FG) composite films were prepared via the in-situ interfacial polycondensation method. Isophthaloyl chloride and m-phenylene diamine were reacted in a two-phase media in the presence of FG nanoparticles. suggesting that the mechanical, electrical, and thermal properties were significantly enhanced in the presence of FG. With the addition of 1.25 wt% FG, the tensile strength and elongation at break were increased by 110% and 20% respectively, when compared with pure PI film. Furthermore, composite films exhibit a 465 °C initial degradation temperature, indicating high thermal stability. Especially, the PMIA/FG film with 0.75 wt% of FG possesses a low dielectric constant of 2.15 compared to a 3.44 dielectric constant for pure PMIA. Therefore, by their excellent performance, PMIA/FG hybrid films represent suitable applications in the microelectronics and aerospace industries.