Analysis of HIT Cells and Improvement

In this essay, we majorly introduce the background and industrialization of HIT cells, and focus on the efficiency of HIT cells through study of mechanism of HIT cells. By analyzing the influence of light loss, intrinsic amorphous silicon thickness and passivation effect, n-type emitter doping layer thickness, defect state and series–parallel resistance on cell efficiency, the methods of improving cell efficiency are discussed: substrate material selection, improving HIT heterojunction interface performance, intrinsically hydrogenated amorphous silicon layer, back field layer, reducing light loss and reducing resistance. And eventually we have conclusions and make some expectations of HIT cells.