Architecture of Composite Multilayer Semiconductor Nanostructures

The problem of ensuring the operational parameters of composite multilayer semiconductor nanoscale structures at the stages of design and technological design is solved. A mathematical model based on the physics of processes occurring in the device structure during operation is developed. The problem is solved for the resonant-tunnelling AlGaAs nanoscale heterostructures. A feature of the developed model is the explicit consideration of the processes of interelectronic interaction by adding the energy of this interaction to the energy of resonant levels in the resonant tunneling structure. As a result of the validation, it was proved that the developed model makes it possible to estimate the current–voltage characteristic of the resonant-tunneling structure with an accuracy sufficient for engineering applications. It also shows a significant gain in calculation speed compared to traditional models of current transfer. Thus, the developed model is promising for use in modern E-CAD systems for designing nonlinear radio signal converters.