Modeling and Simulation of Silver-Based Filamentary Memristive Devices

Memristive devices based on filamentary switching are investigated by 3D kinetic Monte Carlo simulations. The electrochemical metallization device under consideration consists of a stack of Ag/TiO \(_x\) /Pt thin layers. By modeling the Ag ion transport within the solid state electrolyte, driven by the electric field and thermal diffusion, the dynamics of resistive switching and conducting filament growth/dissolution are studied. The model allows to resolve the macroscopic time scale of consecutive growth and dissolution cycles. It provides realistic current-voltage relations as observed experimentally. Simultaneously, it grants a detailed characterization of the influence of the electric field and the thermal heat on the local resistive switching dynamics. It finally provides insight into the microscopic physical mechanisms involved in the set and reset kinetics during switching. It is concluded that the force due to electromigration on Ag in the closed filament may not be negligible during reset process of the device.