Molecular Beam Epitaxy of Germanium on Si(001) for Photodetectors in the Spectral Range from 1.31 to 1.55 \({\mu}\)m

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发表日期：

2024年8月1日

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K. B. Fritzler,
A. S. Deryabin,
I. D. Loshkarev,
A. I. Nikiforov,
I. B. Chistokhin,
A. V. Kolesnikov,
A. P. Vasilenko,
O. P. Pchelyakov,
L. V. Sokolov,
K. E. Pevchikh,
V. V. Svetikov,
A. K. Gutakovskii

摘要

Abstract

The photosensitive germanium layers on a silicon substrate have been formed by molecular beam epitaxy. The structural, optical, and photovoltaic characteristics of the films have been investigated. The data obtained confirm the possibility of using the developed Ge on Si heterostructures for fabrication of photodetectors in the spectral range of 1.3–1.55 \(\mu\) m