Abstract
This paper shows how double perovskites affect the operation of magnetic tunnel junction (MTJ) memory devices. Spin-polarized MTJs may provide a viable alternative to charge-based storage devices. The proposed MTJ memory device uses Cs \({}_{2}\) AgBiCl \({}_{6}\) , Cs \({}_{2}\) AgBiBr \({}_{6}\) , and Cs \({}_{2}\) CuBiBr \({}_{6}\) for the dielectric layer. A composite dielectric layer (CDL) formed by MgO–Cs \({}_{2}\) AgBiCl \({}_{6}\) /Cs \({}_{2}\) AgBiBr \({}_{6}\) /Cs \({}_{2}\) CuBiBr \({}_{6}\) –MgO is presented in this paper and compared. The CDL has introduced ferromagnetic layers between CoFeB and Fe in a penta-layer MTJ device. MTJ devices with Fe–CDL–Fe and CoFeB–CDL–CoFeB have higher switching currents and TMR ratios than those with Fe–MgO–Fe. The antiparallel resistance, parallel resistance, spin transfer torque (STT), tunnel magnetoresistance (TMR), and differential TMR of the proposed MTJ are calculated using a nonequilibrium Green’s function simulator. The power consumption of Fe–MgO–Cs \({}_{2}\) AgBiBr \({}_{6}\) –MgO–Fe based MTJ devices is 14.25 nW. The Fe–MgO–Cs \({}_{2}\) AgBiBr \({}_{6}\) –MgO–Fe showed the highest TMR ratio (1137 \(\%\) ) among all the MTJ models studied.
