Abstract
Visible photoluminescence from SiO \({}_{2}\) films implanted with In \({}^{+}\) and As \({}^{+}\) ions was studied at room temperature depending on the energy of As \({}^{+}\) ions, the temperature of further annealing, and the exciting radiation wavelength. As \({}^{+}\) ions with energies of 40, 80, or 135 keV and In \({}^{+}\) ions with an energy of 50 keV, at which the ratio between the average projective ranges of ions \(\textrm{R}_{p}^{\textrm{As}}/\textrm{R}_{p}^{\textrm{In}}\) was 1, 2, and 3, respectively, were selected. Further annealing was performed at a temperature of 900 and 1100 \({}^{\circ}\) C. Photoluminescence spectra were excited with laser radiation with wavelengths \(\lambda_{ex}=442\) and 473 nm. The spectra of photoluminescence under excitation with \(\lambda_{\textrm{ex}}=473\) nm had a peak at 550 nm, whose energy position was shifted to \(520{-}530\) nm at \(\lambda_{ex}=442\) nm. An increase in the ratio \(\textrm{R}_{p}^{\textrm{As}}/\textrm{R}_{p}^{\textrm{In}}\) was accompanied by a decrease in the photoluminescence intensity and a change in the ratio between the intensities of peaks depending on the annealing temperature. The observed effect was discussed from the viewpoint of recombination between electrons and holes in InAs nanocrystals.
