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Abstract <p>The possibility of precise local etching of monolayer graphene on sapphire using nanoablation by nanosecond 532-nm laser pulses under normal conditions in air has been demonstrated for the first time. The multipulse local removal of graphene was investigated by atomic force microscopy in combination with Raman spectroscopy, according to the specially developed technique, which makes it possible to implement multipulse laser impact and monitor in situ the nanorelief and surface structure before and after laser irradiation. All modes of low-intensity laser irradiation with energy density in the range of 0.85 ≤ <i>Е</i> ≤ 1.55 J/cm<sup>2</sup> had the following features: (i) formation of craters ≈1 nm deep (i.e., through holes in a graphene film, whose diameter depends on the number of pulses and energy density) and (ii) the absence of any explicit signs of thermally induced etching in the Raman spectra of graphene. The mechanism of multipulse low-intensity laser etching of graphene, caused by photostimulated weakening of covalent bonds between carbon atoms and increase in the reactivity of these atoms to oxidation in the presence of ambient oxygen and an aqueous adsorbate, is discussed.</p>

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Multipulse Laser Nanoablation of Monolayer Graphene

  • 期刊论文

  • 发表日期：

    2026年2月1日

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  • P. A. Pivovarov,
  • B. V. Koshchei,
  • E. O. Chiglintsev,
  • K. K. Ashikkalieva,
  • A. I. Chernov,
  • S. M. Pimenov,
  • V. I. Konov

摘要

Abstract

The possibility of precise local etching of monolayer graphene on sapphire using nanoablation by nanosecond 532-nm laser pulses under normal conditions in air has been demonstrated for the first time. The multipulse local removal of graphene was investigated by atomic force microscopy in combination with Raman spectroscopy, according to the specially developed technique, which makes it possible to implement multipulse laser impact and monitor in situ the nanorelief and surface structure before and after laser irradiation. All modes of low-intensity laser irradiation with energy density in the range of 0.85 ≤ Е ≤ 1.55 J/cm2 had the following features: (i) formation of craters ≈1 nm deep (i.e., through holes in a graphene film, whose diameter depends on the number of pulses and energy density) and (ii) the absence of any explicit signs of thermally induced etching in the Raman spectra of graphene. The mechanism of multipulse low-intensity laser etching of graphene, caused by photostimulated weakening of covalent bonds between carbon atoms and increase in the reactivity of these atoms to oxidation in the presence of ambient oxygen and an aqueous adsorbate, is discussed.