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Abstract <p>This paper examines a high-frequency power supply with a transformerless matching circuit. A method is developed for calculating the matching circuit parameters and parameters that must be considered when selecting the circuit main power components—inverter transistors and the matching circuit capacitor. For a specific load case, an inductor model is developed, and the active and inductive reactances is calculated for use in the high-frequency power supply model. To study the power supply and demonstrate its performance, a model for a nominal load power of 3 kW is developed. The model utilizes detailed models of silicon carbide transistors to estimate their thermal losses. The results of the model operation with varying load parameters are presented.</p>

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High-Frequency Semiconductor Power Supply with a Transformerless Matching Circuit for Induction Heating

  • 期刊论文

  • 发表日期：

    2026年1月1日

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  • M. G. Kiselev,
  • Yu. B. Tserkovskiy,
  • M. A. Fedin,
  • K. V. Kryukov,
  • M. A. Bulatenko

摘要

Abstract

This paper examines a high-frequency power supply with a transformerless matching circuit. A method is developed for calculating the matching circuit parameters and parameters that must be considered when selecting the circuit main power components—inverter transistors and the matching circuit capacitor. For a specific load case, an inductor model is developed, and the active and inductive reactances is calculated for use in the high-frequency power supply model. To study the power supply and demonstrate its performance, a model for a nominal load power of 3 kW is developed. The model utilizes detailed models of silicon carbide transistors to estimate their thermal losses. The results of the model operation with varying load parameters are presented.