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Abstract <p>The justification of a system for diagnosing the technical condition of power semiconductor devices, based on the principles of nondestructive testing has been reviewed. An assessment of the current state of protection means for semiconductor products is given. The theoretical foundations forming the basis for the development of such systems are presented, along with the results of experimental studies on a prototype device.</p>

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Experimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloads

  • 期刊论文

  • 发表日期：

    2025年5月1日

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  • V. Ya. Khorolsky,
  • A. M. Isupova,
  • K. M. Yundin,
  • I. K. Sharipov

摘要

Abstract

The justification of a system for diagnosing the technical condition of power semiconductor devices, based on the principles of nondestructive testing has been reviewed. An assessment of the current state of protection means for semiconductor products is given. The theoretical foundations forming the basis for the development of such systems are presented, along with the results of experimental studies on a prototype device.