Circuitry and Technological Methods for Improving the Technical Characteristics of Power Thyristors. Part II. Field-Effect Thyristors with External Control

In this paper, we consider methods for increasing the efficiency of controlling high-power field-effect thyristors using MOS transistors integrated into the structure of a power device. Features of the operation of field-effect thyristors in modes of high voltages and increased current densities are shown. Options for hybrid combined circuits based on induction thyristors with electrostatic control and external MOS control, as well as monolithic thyristor structures with enhanced injection, are presented. The switching processes of field-effect thyristors with integrated control in nominal modes and under current and thermal overloads are considered. Diagrams of the operation of the latest domestic developments of field-controlled thyristors are presented.