Scholarlink

Abstract <p>The paper presents the results of investigating the static characteristics of avalanche photodiodes (APD) fabricated from an InP/InGaAs heterostructure grown by metal organic vapor phase epitaxy, followed by single-stage zinc diffusion from a metal organic source of diethylzinc. The fabricated APDs have demonstrated at room temperature a breakdown voltage of 53 V, dark currents of maximum 0.7 nA, and a capacitance of 0.55 pF at 0.9 times the breakdown voltage. The spectral sensitivity of the fabricated APD was at least 0.8 A/W at a wavelength of 1550 nm. The temperature coefficient of the APD breakdown voltage was 85 mV/K.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

InP/InGaAs-Based Avalanche Photodiodes for Single-Photon Detectors in the 1550 nm Spectral Range

  • 期刊论文

  • 发表日期：

    2025年12月1日

查看全文
  • P. E. Kopytov,
  • S. A. Blokhin,
  • D. S. Papylev,
  • R. V. Levin,
  • V. V. Andryushkin,
  • Ya. N. Kovach,
  • N. A. Maleev,
  • A. I. Baranov,
  • E. V. Nikitina,
  • A. Yu. Andreev,
  • I. V. Yarotskaya,
  • A. A. Marmalyuk,
  • M. A. Ladugin,
  • K. O. Voropaev,
  • A. F. Tsatsul’nikov,
  • I. I. Novikov,
  • L. Ya. Karachinsky

摘要

Abstract

The paper presents the results of investigating the static characteristics of avalanche photodiodes (APD) fabricated from an InP/InGaAs heterostructure grown by metal organic vapor phase epitaxy, followed by single-stage zinc diffusion from a metal organic source of diethylzinc. The fabricated APDs have demonstrated at room temperature a breakdown voltage of 53 V, dark currents of maximum 0.7 nA, and a capacitance of 0.55 pF at 0.9 times the breakdown voltage. The spectral sensitivity of the fabricated APD was at least 0.8 A/W at a wavelength of 1550 nm. The temperature coefficient of the APD breakdown voltage was 85 mV/K.