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Abstract <p>A method for obtaining active surface-enhanced Raman scattering (SERS) substrates with an enhancement factor of ~10<sup>4</sup> is presented. It is shown that substrates with a more pronounced Fano resonance in a silicon porous structure obtained by thermal boron diffusion have a high enhancement factor.</p>

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Realization of the SERS Effect in a Silicon Semiconductor Structure with Fano Resonance

  • 期刊论文

  • 发表日期：

    2025年1月1日

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  • N. N. Melnik,
  • E. V. Perevedentseva,
  • V. V. Tregulov,
  • G. N. Skoptsova,
  • Yu. N. Gorbunova,
  • D. S. Kostsov

摘要

Abstract

A method for obtaining active surface-enhanced Raman scattering (SERS) substrates with an enhancement factor of ~104 is presented. It is shown that substrates with a more pronounced Fano resonance in a silicon porous structure obtained by thermal boron diffusion have a high enhancement factor.