Temperature Dependence of the Output Optical Power of Semiconductor Lasers–Thyristors Based on AlGaAs/GaAs/InGaAs Heterostructures
摘要
Abstract
Measurements of the output optical power, laser-oscillation spectra, optical-pulse duration, and switching-on delays of semiconductor lasers–thyristors with a strip width of 200 μm and a length of 980 μm were performed in the operating temperature range from 20 to 70°C at a nominal value of the discharge capacitor of 22 nF and a control-current amplitude of 10.4 mA. It is shown that lasers–thyristors have high temperature stability. When the devices were heated from 20 to 70°C, the level of reduction of the peak output power did not exceed 15% for supply voltages of 4–20 V and 25% for a voltage of 3 V; the shift of the central wavelength of the oscillation spectrum was on average 0.21 nm/°C.