A Midwave IR Detector Based on a Photonic Crystal Resonator Combined with a Barrier-Diode InAsSb/AlSb Heterostructure

Based on numerical simulation within the finite element method, a hybrid midwave IR photodetector is designed, in which incident electromagnetic radiation is converted into localized surface plasmons that act as an intermediary for excitation transfer to the semiconductor part of the detector. The near-field of surface plasmons allows to utilize thin InAsSb absorption layers to suppress the diffusion component of dark current and its associated noise and to increase quantum efficiency. The developed design taking into account manufacturing considerations is adapted to produce IR detectors that permit matrix format and have high detectivity at temperatures accessible for cascade Peltier elements.