Scholarlink

Abstract <p>Use is made of atomic force and scanning electron microscopies to study the formation of InGaAs/GaAs quantum dots by molecular beam epitaxy under the action of a Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. It is shown that Bi acts as a surfactant, increasing the temperature of emergence of laterally associated quantum dots by 100°C.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Structure of Arrays of Laterally Associated InGaAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy with a Bi Surfactant

  • 期刊论文

  • 发表日期：

    2025年1月1日

查看全文
  • A. V. Klekovkin,
  • A. A. Rudenko,
  • V. I. Tsekhosh,
  • I. P. Kazakov

摘要

Abstract

Use is made of atomic force and scanning electron microscopies to study the formation of InGaAs/GaAs quantum dots by molecular beam epitaxy under the action of a Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. It is shown that Bi acts as a surfactant, increasing the temperature of emergence of laterally associated quantum dots by 100°C.