Fabrication of Silicon Structures with Specified Fano Resonance Characteristics
摘要
Abstract
We study the effect of technological parameters on the characteristics of the Fano resonance in semiconductor structures formed on silicon single-crystal substrates using thermal diffusion of boron. The Fano resonance is investigated using Raman spectroscopy. It is shown that the formation of porous silicon films on the surface of a single-crystal substrate expands the possibilities of fabricating structures with specified Fano resonance parameters, compared to samples without a porous film.