In Situ Study of the Effect of a Bi Surfactant on the Formation of InGaAs/GaAs Quantum Dots by Molecular Beam Epitaxy
摘要
Abstract
The formation of InGaAs/GaAs quantum dots by molecular beam epitaxy is studied under the effect of Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. It is shown that Bi acts as a surfactant, lowering the temperature of the formation of quantum dots by about 50°C.