InP-Based Electro-Optic and Electro-Absorption Modulators for the 1.5-μm Spectral Range
摘要
Abstract
The review examines telecom electro-optic modulators made of group III–V compound semiconductor material composed of indium phosphide. The operation principles of modulators and issues of heterostructure and modulator design optimization are considered; the results of recent developments and the achieved parameters of modulators are presented.