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Abstract <p>Melting of boron-rich chalcogenides, rhombohedral B<sub>12</sub>S and B<sub>12</sub>Se, has been studied at pressures up to 8 GPa using <i>in situ</i> electrical resistivity measurements. It was found that above 2.5 GPa both chalcogenides melt congruently. The melting curve of B<sub>12</sub>Se has a negative slope of ‒30(3)&#xa0;K/GPa, indicating a higher density of the melt compared to the solid phase, while a very unusual zero slope of –1(2) K/GPa is observed for B<sub>12</sub>S. The melting points at ambient pressure were estimated to be 2270(7) K for B<sub>12</sub>S and 2250(16) K for B<sub>12</sub>Se.</p>

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Melting of Boron-Rich Chalcogenides B12S and B12Se under Pressure

  • 期刊论文

  • 发表日期：

    2025年8月1日

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  • V. L. Solozhenko

摘要

Abstract

Melting of boron-rich chalcogenides, rhombohedral B12S and B12Se, has been studied at pressures up to 8 GPa using in situ electrical resistivity measurements. It was found that above 2.5 GPa both chalcogenides melt congruently. The melting curve of B12Se has a negative slope of ‒30(3) K/GPa, indicating a higher density of the melt compared to the solid phase, while a very unusual zero slope of –1(2) K/GPa is observed for B12S. The melting points at ambient pressure were estimated to be 2270(7) K for B12S and 2250(16) K for B12Se.