THz-Radiation Sources on Silicon Avalanche Transit Time Diodes

The paper presents the results of research on the creation and development of radiation sources in the frequency range of 100–400 GHz using silicon (Si) avalanche diodes (ADs). Effective frequency converters of highly stable low-frequency signals with a level of 10–30 mW output microwave power of continuous radiation are proposed and implemented. The minimal circuit losses and maximum output power of ADs, which have a low impedance, are achieved in the oscillating system on an open radial line. The equivalent circuits of generators are considered and electrophysical parameters of avalanche structures are provided. Design schemes of radiation sources and their main parameters are also presented. The use of such radiation sources makes it possible to implement qualitatively new promising applications in this frequency range, in particular, to obtain high-resolution images of targets, to achieve transmission rates of up to 100 Gb/s and more, to study in detail properties of materials, and the structure of the universe.