Stresses in Silicon Dioxide Films Deposited from Dielectric Targets: Results of Atomistic Modelling

The previously proposed method of molecular dynamics modelling for the sputter deposition of thin films from metal targets has been adapted for the case of dielectric targets and applied to silicon dioxide films. The possibility of the ejection from targets of not only silicon atoms but also clusters with oxygen atoms is taken into account by adding O=Si=O molecules to the flow of deposited atoms. Atomistic film clusters have been obtained at high-energy and low-energy sputter deposition with various percentages of molecules in the flow of deposited atoms. The values of the stress tensor components have been calculated. Compressive stresses are observed at high-energy deposition, while tensile stresses are observed at low-energy deposition. The absolute values of the diagonal components of the stress tensor increase with the increasing proportion of molecules in the flow of deposited atoms.