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<p>Efficient energy harvesting for applications such as radioisotope thermoelectric generators and heat-recovery systems require novel thermoelectric materials with exceptional performance. This work demonstrates thermoelectric capabilities of <i>n</i>-type MoS<sub>2</sub>/MoSe<sub>2</sub> heterojunctions fabricated by scalable radiofrequency sputtering. These heterostructures demonstrated an outstanding experimental Seebeck coefficient of ~ − 1.1&#xa0;mV&#xa0;K<sup>−1</sup> (<i>ΔT</i> = 40&#xa0;K), arising from thermally activated carriers with a low activation energy of 32&#xa0;meV, and estimated thermoelectric figure-of-merit (<i>ZT</i>) values of ~ 1.0. Furthermore, computational calculations within framework of Density Functional Theory corroborate experimental findings allowing to elucidate a crucial role of atomic-scale in determining anisotropic thermoelectric properties. Lastly, our data indicate MoS<sub>2</sub>/MoSe<sub>2</sub> heterojunctions are a promising material for low-cost and efficient thermoelectric for microelectronic devices.</p> Graphical abstract <p></p>

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Thermoelectric effect in MoS2/MoSe2 heterostructures: Experimental evidence and theoretical aspects

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月9日

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  • Oscar A. López-Galán,
  • John Nogan,
  • Alejandra Ramírez,
  • Roberto Félix,
  • Francisco Sáenz Soto,
  • Jorge L. Trimmer-Duarte,
  • Luis C. Rubio-Dalli,
  • José Mireles García Jr.,
  • Roberto Carlos Ambrosio Lazaro,
  • Martin Heilmaier,
  • Mauricio Terrones,
  • Abel Hurtado-Macías,
  • Roberto P. Talamantes-Soto,
  • Manuel Ramos

摘要

Efficient energy harvesting for applications such as radioisotope thermoelectric generators and heat-recovery systems require novel thermoelectric materials with exceptional performance. This work demonstrates thermoelectric capabilities of n-type MoS2/MoSe2 heterojunctions fabricated by scalable radiofrequency sputtering. These heterostructures demonstrated an outstanding experimental Seebeck coefficient of ~ − 1.1 mV K−1 (ΔT = 40 K), arising from thermally activated carriers with a low activation energy of 32 meV, and estimated thermoelectric figure-of-merit (ZT) values of ~ 1.0. Furthermore, computational calculations within framework of Density Functional Theory corroborate experimental findings allowing to elucidate a crucial role of atomic-scale in determining anisotropic thermoelectric properties. Lastly, our data indicate MoS2/MoSe2 heterojunctions are a promising material for low-cost and efficient thermoelectric for microelectronic devices.

Graphical abstract