<p>In optoelectronics, single-walled carbon nanotubes (SWCNTs) are among the most promising nanomaterials for replacing indium tin oxide (ITO). However, it remains difficult to fabricate uniform, inexpensive, and low-sheet resistance SWCNT thin films. The material, the post-treatment technique, and the fabrication methods are the important primary factors that determine the quality of the thin film. In this study, the fabrication of SWCNT thin films was accomplished by the use of an automated spray coating method. Nitric acid vapor treatment is the post-treatment approach that was used so that the SWCNT thin film’s characteristics could be improved. In this work, we analyze the electrical, structural, and morphological characteristics of SWCNT thin films. Our fabricated optimum SWCNT thin film provides a sheet resistance value of 9.7&#xa0;Ω/sq. This value for the finding sheet resistance is better suited for applications involving optoelectronics and ITO replacement.</p> Graphical abstract <p></p>

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Enhanced electrical properties of spray-coated SWCNT thin films via nitric acid vapor treatment

  • Arulampalam Kunaraj

摘要

In optoelectronics, single-walled carbon nanotubes (SWCNTs) are among the most promising nanomaterials for replacing indium tin oxide (ITO). However, it remains difficult to fabricate uniform, inexpensive, and low-sheet resistance SWCNT thin films. The material, the post-treatment technique, and the fabrication methods are the important primary factors that determine the quality of the thin film. In this study, the fabrication of SWCNT thin films was accomplished by the use of an automated spray coating method. Nitric acid vapor treatment is the post-treatment approach that was used so that the SWCNT thin film’s characteristics could be improved. In this work, we analyze the electrical, structural, and morphological characteristics of SWCNT thin films. Our fabricated optimum SWCNT thin film provides a sheet resistance value of 9.7 Ω/sq. This value for the finding sheet resistance is better suited for applications involving optoelectronics and ITO replacement.

Graphical abstract