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<p>Al and Ga (1:1) co-doped ZnO (AGZO) thin films were prepared on glass substrates using the sol–gel spin-coating technique and subsequently irradiated with 8&#xa0;MeV electrons at doses of 5&#xa0;kGy and 10&#xa0;kGy in air at ambient temperature to evaluate their radiation tolerance. X-ray diffraction analysis revealed no detectable phase changes, indicating excellent structural stability after irradiation. Morphological studies revealed grain growth and radiation-induced grain coalescence in the irradiated films. Optical transmittance in the visible region decreased from 89 (unirradiated) to 77% (10&#xa0;kGy), accompanied by a redshift in the optical bandgap from 3.23 to 3.18&#xa0;eV and an increase in Urbach energy, indicating localized defect formation. Film irradiated at 5&#xa0;kGy showed the lowest resistivity (0.27 Ω cm) and highest figure of merit, attributed to improved microstructural ordering and reduced scattering. The results demonstrate that controlled electron irradiation effectively tunes AGZO thin films for radiation-hardened optoelectronic space applications.</p> Graphical abstract <p></p>

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High-energy electron irradiation-induced modulations of Al and Ga Co-Doped ZnO thin films for radiation-hardened optoelectronic devices

  • 期刊论文

  • 发表日期：

    2026年6月1日

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  • N. Rashmi,
  • Felcy Jyothi Serrao,
  • Veena Shivadas Kindalkar,
  • S. Raghavendra,
  • N. B. Rithin Kumar,
  • K. Kumara

摘要

Al and Ga (1:1) co-doped ZnO (AGZO) thin films were prepared on glass substrates using the sol–gel spin-coating technique and subsequently irradiated with 8 MeV electrons at doses of 5 kGy and 10 kGy in air at ambient temperature to evaluate their radiation tolerance. X-ray diffraction analysis revealed no detectable phase changes, indicating excellent structural stability after irradiation. Morphological studies revealed grain growth and radiation-induced grain coalescence in the irradiated films. Optical transmittance in the visible region decreased from 89 (unirradiated) to 77% (10 kGy), accompanied by a redshift in the optical bandgap from 3.23 to 3.18 eV and an increase in Urbach energy, indicating localized defect formation. Film irradiated at 5 kGy showed the lowest resistivity (0.27 Ω cm) and highest figure of merit, attributed to improved microstructural ordering and reduced scattering. The results demonstrate that controlled electron irradiation effectively tunes AGZO thin films for radiation-hardened optoelectronic space applications.

Graphical abstract