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<p>The (C–Vg)/f and (G/<i>ω</i>–Vg)/f characteristics of Al/SiO<sub>2</sub>/p–Si structures fabricated by the ECR-PECVD method were investigated in the frequency range of 30&#xa0;kHz–1&#xa0;MHz at room temperature. The linear behavior of the C<sup>−2</sup>–Vg plots over a wide voltage range indicates that interface states and inversion layer charges cannot follow the AC signal in the depletion region, especially under strong inversion and accumulation. The interface state density was found to decrease exponentially with increasing frequency. The <i>R</i><sub><i>s</i></sub>–Vg profiles show a pronounced peak in the depletion region at low frequencies, which diminishes at higher frequencies due to the distribution of interface states at the SiO<sub>2</sub>/Si interface. The influence of series resistance becomes significant at high frequencies; therefore, measured capacitance and conductance were corrected using the Nicollian–Goetzberger method to obtain the true MOS parameters. I–V measurements confirm typical MOS behavior. Interface state density and series resistance strongly affect the electrical characteristics of the devices.</p> Graphical abstract <p></p>

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Interface states and series-resistance-controlled electrical behavior quality of ECR-PECVD SiO2/p–Si MOS structure

  • 期刊论文

  • 发表日期：

    2026年5月21日

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  • Omar Rejaiba,
  • Alejandro F. Braña de Cal,
  • Adel Matoussi

摘要

The (C–Vg)/f and (G/ω–Vg)/f characteristics of Al/SiO2/p–Si structures fabricated by the ECR-PECVD method were investigated in the frequency range of 30 kHz–1 MHz at room temperature. The linear behavior of the C−2–Vg plots over a wide voltage range indicates that interface states and inversion layer charges cannot follow the AC signal in the depletion region, especially under strong inversion and accumulation. The interface state density was found to decrease exponentially with increasing frequency. The Rs–Vg profiles show a pronounced peak in the depletion region at low frequencies, which diminishes at higher frequencies due to the distribution of interface states at the SiO2/Si interface. The influence of series resistance becomes significant at high frequencies; therefore, measured capacitance and conductance were corrected using the Nicollian–Goetzberger method to obtain the true MOS parameters. I–V measurements confirm typical MOS behavior. Interface state density and series resistance strongly affect the electrical characteristics of the devices.

Graphical abstract