The study of AIS/CISe stacked solar cells by wx-AMPS simulation
摘要
In this paper, the simulation software wx-AMPS is used to simulate single and stacked absorber layer solar cells. The simulation results of single absorber layer solar cells show that the photoelectric conversion efficiency (η) increases with the increase of absorber layer thickness. As the defect density of absorber layer increases, the number of recombination centers increases, and the η decreases accordingly. Furthermore, the calculation results show that the carrier transport mechanism changes from the tunneling-current mechanism to the leakage-current mechanism with the increasing work temperature. The optimal simulation results of stacked solar cell indicate that the η is 24.0332%, the fill factor is 82.7631%, the open circuit voltage is 0.9804 V, and the short-circuit current is 29.6198 mA/cm2, which are superior to these of single-absorption-layer solar cells.
Graphical abstractIn image (a), as the defect density of the absorber layer increases, the number of recombination centers rises, leading to a corresponding decrease in solar cell efficiency. Furthermore, due to the full absorption of light by the dual absorber layers, the performance of the stacked solar cell is significantly improved compared to the single-absorber-layer AIS and CISe solar cells. In image (b), an analysis of the microscopic effects of temperature variations on the stacked solar cell shows that as the operating temperature increases, the current-voltage (I-V) curves indicate a weakening in both the current and voltage output capabilities. As shown in table, based on calculation of the I-V curves with increasing temperature, the ideality factor increases from 1.23 to 3.75, which means that the carrier transport mechanism is changed from the tunneling-current mechanism to the leakage-current mechanism.