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<p>Traditionally, SnO has been classified as a p-type semiconductor and SnO<sub>2</sub> as n-type. Considering this difference, SnO<sub><i>x</i></sub> layers (322–656&#xa0;nm thick) were synthesized via cathodic sputtering on PET to investigate the relationship between oxygen bonding and conductivity. XPS analysis revealed oxidation in the layers with <i>x</i> of 0.19, 0.43, 1.6, 1.9, 3.1 and 3.5; oxides with <i>x</i> ≈ 1 could not be synthesized. The predominant phases (&gt; 92%) had <i>x</i> = 1.6 and 1.9. Oxides with <i>x</i> = 1.9 can be considered n-type semiconductors, but oxides with <i>x</i> = 1.6 are in the middle of n- and p-type semiconductors. These results showed that in Sn, n-type behavior extends from <i>x</i> = 1.9 to 1.6. Despite these stoichiometric variations, the oxides exhibited consistent physical properties: electrical resistivity between 11 and 39 Ω-m, and optical characterization showed high UV absorption in the 200–400&#xa0;nm interval.</p> Graphical abstract <p></p>

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p- and n-type conductivity in SnOx oxides synthesized by cathodic sputtering

  • 期刊论文

  • 发表日期：

    2026年4月14日

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  • Adriana Ventolero,
  • Ma. Guadalupe Olayo,
  • Elena Colín-Orozco,
  • J. Cuauhtémoc Palacios,
  • Fernando G. Flores,
  • Rosario Ramírez,
  • Guillermo J. Cruz

摘要

Traditionally, SnO has been classified as a p-type semiconductor and SnO2 as n-type. Considering this difference, SnOx layers (322–656 nm thick) were synthesized via cathodic sputtering on PET to investigate the relationship between oxygen bonding and conductivity. XPS analysis revealed oxidation in the layers with x of 0.19, 0.43, 1.6, 1.9, 3.1 and 3.5; oxides with x ≈ 1 could not be synthesized. The predominant phases (> 92%) had x = 1.6 and 1.9. Oxides with x = 1.9 can be considered n-type semiconductors, but oxides with x = 1.6 are in the middle of n- and p-type semiconductors. These results showed that in Sn, n-type behavior extends from x = 1.9 to 1.6. Despite these stoichiometric variations, the oxides exhibited consistent physical properties: electrical resistivity between 11 and 39 Ω-m, and optical characterization showed high UV absorption in the 200–400 nm interval.

Graphical abstract