The optical properties of InP material have not been properly utilized before, owing to the higher lattice constant compared with other materials such as GaInP or GaAs. We have come up with an approach of utilizing the misfit length, earlier used in the integration of compound and Si material. AlGaAs is used as a buffer material in the misfit location, to properly integrate the two different cells. A novel design for a GaInP/InP dual-junction solar cell is proposed with a conventional GaAs tunnel junction to surpass the Shockley–Queisser limit of <InlineEquation ID="IEq1"> <EquationSource Format="TEX">$29.8\%$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>29.8</mn> <mo>%</mo> </mrow> </math></EquationSource> </InlineEquation>. Firstly, the InP single-junction cell is designed with the attainment of <InlineEquation ID="IEq2"> <EquationSource Format="TEX">$24.47\%$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>24.47</mn> <mo>%</mo> </mrow> </math></EquationSource> </InlineEquation> efficiency, necessary for the dual-junction model. The two-terminal GaInP/InP solar cell achieves a current density of <InlineEquation ID="IEq3"> <EquationSource Format="TEX">$20.75$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>20.75</mn> </mrow> </math></EquationSource> </InlineEquation> mA/cm2 in the integrated model. Proper tunneling through the tunnel diode provides a better contribution to the carrier transport and achieves an open-circuit voltage of <InlineEquation ID="IEq4"> <EquationSource Format="TEX">$2.4365$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>2.4365</mn> </mrow> </math></EquationSource> </InlineEquation> eV and power conversion efficiency of <InlineEquation ID="IEq5"> <EquationSource Format="TEX">$35.77\%$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>35.77</mn> <mo>%</mo> </mrow> </math></EquationSource> </InlineEquation>. Graphical abstract High-efficiency solar cells are very important because of their high power conversion to generate renewable energy. A GaInP/InP dual-junction solar cell is designed herein to surpass the Shockley–Quiesser limit. The problem of lattice mismatch is mitigated in the dual-junction cell via a buffer layer with greater misfit length. Moreover, current matching is provided by connecting the two cells with a highly doped GaAs tunnel junction. Also, a new wide-band GaInP tunnel junction is also analyzed with respect to the performance of the designed cell. This integrated two-terminal GaInP/InP solar cell achieves a current density of <InlineEquation ID="IEq6"> <EquationSource Format="TEX">$20.75$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>20.75</mn> </mrow> </math></EquationSource> </InlineEquation> mA/cm2 in the integrated model. Proper tunneling through the tunnel diode provides a better contribution to the carrier transport and achieves an open-circuit voltage of <InlineEquation ID="IEq7"> <EquationSource Format="TEX">$2.4365$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>2.4365</mn> </mrow> </math></EquationSource> </InlineEquation> eV and a power conversion efficiency of <InlineEquation ID="IEq8"> <EquationSource Format="TEX">$35.77\%$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>35.77</mn> <mo>%</mo> </mrow> </math></EquationSource> </InlineEquation>. The novel integrated solar cell will lead toward the development of high-efficiency solar cells.

A novel model for current-matched GaInP/InP integrated two-terminal solar cell with 35.77% efficiency with a GaInP wide-band tunnel junction

期刊论文
发表日期：

2026年4月20日

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Smriti Halder,
Dhandapani Vaithiyanathan,
Manish Verma

摘要

The optical properties of InP material have not been properly utilized before, owing to the higher lattice constant compared with other materials such as GaInP or GaAs. We have come up with an approach of utilizing the misfit length, earlier used in the integration of compound and Si material. AlGaAs is used as a buffer material in the misfit location, to properly integrate the two different cells. A novel design for a GaInP/InP dual-junction solar cell is proposed with a conventional GaAs tunnel junction to surpass the Shockley–Queisser limit of $29.8\%$ $29.8 %$ . Firstly, the InP single-junction cell is designed with the attainment of $24.47\%$ $24.47 %$ efficiency, necessary for the dual-junction model. The two-terminal GaInP/InP solar cell achieves a current density of $20.75$ $20.75$ mA/cm² in the integrated model. Proper tunneling through the tunnel diode provides a better contribution to the carrier transport and achieves an open-circuit voltage of $2.4365$ $2.4365$ eV and power conversion efficiency of $35.77\%$ $35.77 %$ .

Graphical abstract

High-efficiency solar cells are very important because of their high power conversion to generate renewable energy. A GaInP/InP dual-junction solar cell is designed herein to surpass the Shockley–Quiesser limit. The problem of lattice mismatch is mitigated in the dual-junction cell via a buffer layer with greater misfit length. Moreover, current matching is provided by connecting the two cells with a highly doped GaAs tunnel junction. Also, a new wide-band GaInP tunnel junction is also analyzed with respect to the performance of the designed cell. This integrated two-terminal GaInP/InP solar cell achieves a current density of $20.75$ $20.75$ mA/cm² in the integrated model. Proper tunneling through the tunnel diode provides a better contribution to the carrier transport and achieves an open-circuit voltage of $2.4365$ $2.4365$ eV and a power conversion efficiency of $35.77\%$ $35.77 %$ . The novel integrated solar cell will lead toward the development of high-efficiency solar cells.