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Abstract <p>The incorporation of bismuth (5% mol) into the B-site of the complex perovskite structure that gives rise to the (K<sub>0.49</sub>Na<sub>0.49</sub>Ba<sub>0.02</sub>)(Ni<sub>0.01</sub>Bi<sub>0.05</sub>Nb<sub>0.94</sub>)O<sub>2.945</sub> (named KNBNBiNO) system increases the concentration of oxygen vacancies and results in higher polarization values. The out-of-plane and in-plane polarized ferroelectric domains were confirmed by Piezoresponse Force Microscopy (PFM). The effective piezoelectric coefficient, d<sub>eff</sub>, measured by PFM, changed from 11&#xa0;pm/V in dark to 69&#xa0;pm/V under sustained white light illumination. The influence of the photoferroelectric effect on the piezoelectric properties of the present system, is described.</p> Graphical abstract <p></p>

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Piezo-photoferroelectric response in bismuth-modified KNBNBiNO

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月18日

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  • Jorge J. Portelles,
  • Juan Fuentes,
  • René López,
  • Julia F. Rebellón,
  • José J. Gervacio,
  • Eduardo A. Murillo,
  • Jesús M. Siqueiros,
  • Ma. de la Paz Cruz

摘要

Abstract

The incorporation of bismuth (5% mol) into the B-site of the complex perovskite structure that gives rise to the (K0.49Na0.49Ba0.02)(Ni0.01Bi0.05Nb0.94)O2.945 (named KNBNBiNO) system increases the concentration of oxygen vacancies and results in higher polarization values. The out-of-plane and in-plane polarized ferroelectric domains were confirmed by Piezoresponse Force Microscopy (PFM). The effective piezoelectric coefficient, deff, measured by PFM, changed from 11 pm/V in dark to 69 pm/V under sustained white light illumination. The influence of the photoferroelectric effect on the piezoelectric properties of the present system, is described.

Graphical abstract