<p>Graphene oxide (GO) and its reduced form (rGO) have generated interest due to their structure and optoelectronic properties. In this work, we investigated the deposition of GO on SiO₂ substrates and its modification using plasma-assisted technique employing oxygen and nitrogen atmospheres. The aim of this work is to study the structural evolution of GO toward rGO and how it interacts with the SiO₂ substrate. Raman spectroscopy confirmed the incorporation of graphene oxide (GO) through the appearance of the D and G bands (~ 1350 and ~ 1600 cm⁻¹, respectively), respectively. X-ray diffraction (XRD) revealed the characteristic peaks of the SiO₂ substrate, as well as an additional broad diffraction peak around 2θ ≈ 26°, which is attributed to the partial reduction of the GO. Optical microscopy revealed different surface morphologies, where nitrogen treatment led to darker and more aggregated domains, while oxygen treatment resulted in smaller and more dispersed features.</p> Graphical abstract <p>(<b>a</b>) Atmospheric pressure plasma technique; (<b>b</b>) low-pressure plasma technique in an O₂ atmosphere; (<b>c</b>) low-pressure plasma technique in an N₂ atmosphere</p> <p></p>