<p>CdS thin films, used as optical windows in photovoltaic devices, were deposited on glass substrates using a custom-designed cryogenic system under high vacuum (10<sup>–6</sup>&#xa0;Torr) at substrate temperatures between 100 and 300&#xa0;K in 50&#xa0;K intervals. XRD analysis confirmed the hexagonal crystal structure of all films without structural damage. FESEM images showed uniform, close-packed grain morphology at 200&#xa0;K, characterized by equal-sized clusters (10–12&#xa0;nm), indicative of soliton growth. This film also exhibited the highest optical transmittance (96%). Grain sizes ranged from 45 to 7.6&#xa0;nm, corresponding to optical bandgap values between 2.41 and 2.46&#xa0;eV. Electrical measurements revealed resistivity values between 6.1 × 10<sup>3</sup> and 7.3 × 10<sup>3</sup> Ω·cm and carrier concentrations from 3.4 × 10<sup>16</sup> to 7.1 × 10<sup>15</sup>&#xa0;cm<sup>−3</sup>. CdS layers produced at 200&#xa0;K and 300&#xa0;K were used to fabricate CdS/CdTe solar cells, where the 200&#xa0;K sample achieved the highest photovoltaic efficiency of 9.44%.</p> Graphical abstract <p></p>

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Optimization of the CdS optical window layer via cryogenic fabrication and its integration into CdS/CdTe solar cells

  • Melih Manir,
  • Kemal Kuvvet,
  • Göksel Aytemiz,
  • Vagif Nevruzoglu

摘要

CdS thin films, used as optical windows in photovoltaic devices, were deposited on glass substrates using a custom-designed cryogenic system under high vacuum (10–6 Torr) at substrate temperatures between 100 and 300 K in 50 K intervals. XRD analysis confirmed the hexagonal crystal structure of all films without structural damage. FESEM images showed uniform, close-packed grain morphology at 200 K, characterized by equal-sized clusters (10–12 nm), indicative of soliton growth. This film also exhibited the highest optical transmittance (96%). Grain sizes ranged from 45 to 7.6 nm, corresponding to optical bandgap values between 2.41 and 2.46 eV. Electrical measurements revealed resistivity values between 6.1 × 103 and 7.3 × 103 Ω·cm and carrier concentrations from 3.4 × 1016 to 7.1 × 1015 cm−3. CdS layers produced at 200 K and 300 K were used to fabricate CdS/CdTe solar cells, where the 200 K sample achieved the highest photovoltaic efficiency of 9.44%.

Graphical abstract