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<p>MoS<sub>2</sub>/WS<sub>2</sub> heterostructures make them significant due to their ability to integrate the advantageous properties of both materials, thereby facilitating the emergence of novel functionalities. Achieving uniform, large-area layers and thoroughly exploring their properties for potential applications is essential. This research investigated the phonon and exciton characteristics of MoS<sub>2</sub>/WS<sub>2</sub> heterostructures deposited using chemical vapor deposition (CVD) and metal–organic chemical vapor deposition (MOCVD) on sapphire and SiO<sub>2</sub> substrates and their individual layers. We employed polarized Raman and photoluminescence (PL) spectroscopy to analyze these materials. The study identified notable PL emissions characterized by overtone-like features in two distinct energy regions within the MoS<sub>2</sub>/WS<sub>2</sub>/SiO<sub>2</sub>/Si heterostructures. These emissions, denoted as X<sup>A1</sup> and X<sup>A2</sup>, were detected at 2.134&#xa0;eV and 2.155&#xa0;eV, respectively. In the heterostructure (MoS<sub>2</sub>/WS<sub>2</sub>) on sapphire and SiO<sub>2</sub>/Si, the MoS<sub>2</sub> originated PL-extinction ratios are 1.6306 and 0.9638, respectively, and the WS<sub>2</sub> originated PL-extinction ratios are 1.055 and 0.8519, respectively.</p> Graphical abstract <p></p>

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Polarization-dependent phonons and excitons on two-step growth vertical MoS2/WS2 heterostructures by CVD

  • 期刊论文

  • 发表日期：

    2025年9月30日

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  • M. K. Indika Senevirathna,
  • Elycia Wright,
  • Xudong Zheng,
  • Robin Rouseau,
  • Kedar Johnson,
  • Selena Coye,
  • P. K. D. D. P. Pitigala,
  • Darrell G. Schlom,
  • Michael D. Williams

摘要

MoS2/WS2 heterostructures make them significant due to their ability to integrate the advantageous properties of both materials, thereby facilitating the emergence of novel functionalities. Achieving uniform, large-area layers and thoroughly exploring their properties for potential applications is essential. This research investigated the phonon and exciton characteristics of MoS2/WS2 heterostructures deposited using chemical vapor deposition (CVD) and metal–organic chemical vapor deposition (MOCVD) on sapphire and SiO2 substrates and their individual layers. We employed polarized Raman and photoluminescence (PL) spectroscopy to analyze these materials. The study identified notable PL emissions characterized by overtone-like features in two distinct energy regions within the MoS2/WS2/SiO2/Si heterostructures. These emissions, denoted as XA1 and XA2, were detected at 2.134 eV and 2.155 eV, respectively. In the heterostructure (MoS2/WS2) on sapphire and SiO2/Si, the MoS2 originated PL-extinction ratios are 1.6306 and 0.9638, respectively, and the WS2 originated PL-extinction ratios are 1.055 and 0.8519, respectively.

Graphical abstract