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Abstract <p>In this study, we investigated the effects of reduction annealing on the structural and electrical properties of few-layer WO₃ thin films deposited via Pulsed Laser Deposition at a vacuum pressure of 10⁻<sup>1</sup>&#xa0;mbar on Si/SiO<sub>2</sub> substrates. X-ray diffraction revealed nanocrystalline WO<sub>3</sub> with (002) preferred orientation, and peak shifts post-annealing indicated unit cell volume reduction. Raman spectroscopy showed characteristic vibrational modes, confirming structural transitions. UV–Vis measurements revealed a bandgap of ~ 3.2&#xa0;eV, with a reduction after 2&#xa0;h of annealing, followed by a slight increase after 15&#xa0;h. Annealing induced oxygen vacancies, enhancing electrical conductivity by several orders of magnitude. Despite this, FET measurements showed the films retained semiconducting behavior. These findings suggest that controlled annealing effectively tunes the optoelectronic properties of WO<sub>3</sub> thin films, making them promising candidates for applications in nanoelectronics and optoelectronics, where tunable conductivity and preserved semiconducting characteristics are crucial for device performance.</p> Graphical abstract <p></p>

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Tuning optoelectronic properties of WO3 thin films through reduction annealing

  • 期刊论文

  • 发表日期：

    2025年8月26日

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  • Md. Zulkernain Haider,
  • Fahad Munshe,
  • Sandipani Ghosh,
  • Jongyun Lee,
  • Kartik C. Ghosh

摘要

Abstract

In this study, we investigated the effects of reduction annealing on the structural and electrical properties of few-layer WO₃ thin films deposited via Pulsed Laser Deposition at a vacuum pressure of 10⁻1 mbar on Si/SiO2 substrates. X-ray diffraction revealed nanocrystalline WO3 with (002) preferred orientation, and peak shifts post-annealing indicated unit cell volume reduction. Raman spectroscopy showed characteristic vibrational modes, confirming structural transitions. UV–Vis measurements revealed a bandgap of ~ 3.2 eV, with a reduction after 2 h of annealing, followed by a slight increase after 15 h. Annealing induced oxygen vacancies, enhancing electrical conductivity by several orders of magnitude. Despite this, FET measurements showed the films retained semiconducting behavior. These findings suggest that controlled annealing effectively tunes the optoelectronic properties of WO3 thin films, making them promising candidates for applications in nanoelectronics and optoelectronics, where tunable conductivity and preserved semiconducting characteristics are crucial for device performance.

Graphical abstract